ترانزیستور Bd139
ترانزیستور Bd139 Type Designator: BD139 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 12 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 50 MHz …
ترانزیستور ماسفت 75NF75 ORG
ترانزیستور ماسفت 75NF75 ORG Type Designator: 75NF75 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 200 W Maximum Drain-Source Voltage |Vds|: 75 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 75 A Maximum Junction Temperature (Tj): 150 °C Total Gate …
ترانزیستور ماسفت IRFZ48N ORG
ترانزیستور ماسفت IRFZ48N ORG Type Designator: IRFZ48N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 130 W Maximum Drain-Source Voltage |Vds|: 55 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 64 A Maximum Junction Temperature (Tj): 175 °C Total Gate …
ترانزیستور ماسفت IRFZ44N ORG
ترانزیستور ماسفت IRFZ44N ORG Type Designator: IRFZ44N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 94 W Maximum Drain-Source Voltage |Vds|: 55 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 49 A Maximum Junction Temperature (Tj): 175 °C Total Gate …
ترانزیستور ماسفت IRF540N ORG
ترانزیستور ماسفت IRF540N ORG Type Designator: IRF540N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 130 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 33 A Maximum Junction Temperature (Tj): 175 °C Total Gate …
ترانزیستور ماسفت IRF640N ORG
ترانزیستور ماسفت IRF640N ORG Type Designator: IRF640N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 18 A Total Gate Charge (Qg): 44.7 nC Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm دیتاشیت …
ترانزیستور ماسفت IRF740 ORG
ترانزیستور ماسفت IRF740 ORG Type Designator: IRF740 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 125 W Maximum Drain-Source Voltage |Vds|: 400 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 10 A Maximum Junction Temperature (Tj): 150 °C Total Gate …
ترانزیستور ماسفت IRF840 ORG
ترانزیستور ماسفت IRF840 ORG Type Designator: IRF840 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 125 W Maximum Drain-Source Voltage |Vds|: 500 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 8 A Maximum Junction Temperature (Tj): 150 °C Total Gate …
ترانزیستور ماسفت IRF3205 ORG
ترانزیستور ماسفت IRF3205 ORG IRF3205 MOSFET. Datasheet pdf. Equivalent Type Designator: IRF3205 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 200 W Maximum Drain-Source Voltage |Vds|: 55 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 110 A Maximum Junction Temperature …
ترانزیستور ماسفت FQPF4N60
ترانزیستور ماسفت FQPF4N60 Type Designator: FQPF4N60 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 36 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V Maximum Drain Current |Id|: 2.6 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge …
ترانزیستور ماسفت FQPF7N60
ترانزیستور ماسفت FQPF7N60 Type Designator: FQPF7N60 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 48 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V Maximum Drain Current |Id|: 4.3 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge …
ترانزیستور ماسفت FQPF10N60C org
ترانزیستور ماسفت FQPF10N60C org Type Designator: FQPF10N60C Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 50 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 9.5 A Maximum Junction Temperature (Tj): 150 °C Total Gate …
ماسفت 20n60 پکیج TO-220
ماسفت 20n60 پکیج TO-220 Marking Code: 20N60C3 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 208 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V Maximum Drain Current |Id|: 20.7 A Maximum Junction Temperature (Tj): 150 °C Total Gate …
BD138
BD138 Type Designator: BD138 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 12 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 50 MHz Forward …
BD137
BD137 Type Designator: BD137 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 12 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 50 MHz Forward …