ترانزیستور ماسفت FCD380N60E SMD 10A 600V N-channel
Type Designator: FCD380N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 106 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 10.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 34 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 945 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: DPAK
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