ترانزیستور ماسفت FQPF4N60

Type Designator: FQPF4N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 36 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO-220F

fqpf4n60.pdf Size:549K _fairchild_semi