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ترانزیستور ماسفت IRF640N ORG Type Designator: IRF640N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 18 A Total Gate Charge (Qg): 44.7 nC Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm دیتاشیت …
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Type Designator: IRF640N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 18 A
Total Gate Charge (Qg): 44.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
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