ترانزیستور ماسفت 1N60 SMD 1.2A 600V N-channel
Type Designator: 1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 28 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 11.5 Ohm
Package: DPAK
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